【電機系書報討論演講訊息】

書報討論網頁：http://lms.nthu.edu.tw/course/21140

演講公告網址：/p/403-1175-2629-1.php

題   目：Memory Trends, Challenges and Solutions

講   員：Dr. Jonathan Chang【TSMC, Senior Director】

時         間：2015年5月15日(星期五) 下午2時20分

               (2:10PM入場，為維持演講品質，2:30PM後不開放入場)

地         點：清華大學台達館105教室

Abstract:

Memory continues to be critical element in VLSI applications from big data to mobile to wearables and IoT. SRAM has been at the forefront of technology scaling for every process generation. As we move to sub 20nm technology, technologists and designers faces key challenges including bit cell area scaling, VDD/Vccmin scaling, leakage and dynamic power reduction, etc. In parallel, memory industry has been looking for emerging memory solutions to replace entrenched memory technologies including SRAM, DRAM and Flash. This talk will discuss the challenges and potential solutions for SRAM scaling and the memory trends in the emerging memory.

bio:
Jonathan Chang is a director leading Memory Solution Division at TSMC. He is responsible for delivering embedded memory IP’s including SRAM compilers, custom SRAM IPs, efuse IPs for low power, high speed applications for advance technology nodes. Before joining TSMC in 2010, Jonathan had been with Intel Corporation, Santa Clara, CA since 1998 and had been engaged in the design of several high-performance microprocessors with emphasis in large, high-speed, low power cache design.  He was a Principal Engineer in the area of cache design in Enterprise Microprocessor Group. Jonathan is a senior member of the IEEE since 2006 and serves as a technical program committee member of Memory subcommittee for 2013/2014/2015/2016 ISSCC. Jonathan was the NAE (North America and Europe) technical program committee member of 2011 VLSI symposium on circuits and technical program committee member of 2014 International Test Conference. Since 2011, Jonathan has been the associate editor of IEEE Trans on VLSI. Jonathan has published 20+ technical papers in IEEE conferences or journals and held 5 patents with additional 15 pending in SRAM design. Jonathan Chang received the B.S. degree in electrical engineering from National Taiwan University, and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA.

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